Syllabus
1. P-N junction Ideal current-voltage characteristics, field and potential distribution, junction capacity. Real characteristics of P-N junction in forward and reverse direction (breakdown types).
2. Metal-semiconductor contact Schottky effect, ideal Schottky contact, field and space charge potential. Basic approaches to charge transport (current-voltage characteristics and Schottky diode capacitance).
3. Metal-Insulator-Semiconductor (MIS)Structure Ideal MIS diode. Capacity of ideal and real MIS structure.
4. Heterojunctions Isotype and anisotype heterojunctions. Energy band diagrams, influence of states on interface, charge transport.
5. Photovoltaic effects Photoelectric properties of semiconductors, lifetime of non-equilibrium carriers, movement of charge carriers in space and time, surface effect. P-N junction illuminated parallel and perpendicular to junction. Solar cells: principle of operation, efficiency and loss mechanisms, construction.
6. Semiconductor sources of optical radiation Radiation generation processes. Electroluminescent devices, luminescence mechanisms. Light-emitting diodes (LED): efficiency, response time, materials. Semiconductor lasers: stimulated emission, optical feedback, emission spectral characteristics, radiation power, efficiency. Double heterostructure lasers, construction, materials. Laser degradation.
7. Photodetectors Characteristic parameters, factors influencing detectivity. Methods of radiation detection. Photoconductors: classification, signal-to-noise ratio, materials. Photodiodes and PIN photodiodes: operation modes, response time, signal-to-noise ratio. Schottky photodiode.
8. Semiconductor sensors Vidicon, plumbicon. Charge-coupled devices.
Annotation
Principles of optoelectronic devices: P-N junction, Schottky contact, MIS structure, heterojunctions, photovoltaic phenomena (solar cells), light-emitting diodes and semiconductors lasers, photodetectors, charge-coupled devices.