Syllabus
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1. P-N Junction Current-voltage characteristics. Generation-recombination process. High-injection condition. Junction breakdown. *
2. Metal-Semiconductor Contact Schottky effect. Current transport processes: current-voltage characteristics, capacitance of Schottky diodes. *
3. Metal-Insulator-Semiconductor (MIS) Structure Ideal MIS diode. Surface states, surface charges, and space charges. *
4. Heterojunctions Isotype and anisotype heterojunctions. Energy band diagrams, transport of charge. Two-dimensional electron gas. Superstructures. *
5. Photovoltaic Effects P-N Junction illuminated parallel and perpendicular to junction. Illuminated Schottky diode. Solar cells. *
6. Semiconductor Sources of Radiation Electroluminescent devices. Light-emitting diodes (LED): materials, configuration, and performance. Semiconductor lasers. Laser operating characteristics, optical feedback, calculation of basic parameters, device structure. Double heterostructure lasers. Laser degradation. *
7. Photodetectors Characteristic parameters, factors influenced detectivity. Methods of radiation detection. Photoconductors: signal-to-noise ratio, materials. Photodiodes, PIN photodiodes, and avalanche photodiodes: operation modes, response time, signal-to-noise ratio. Metal-semiconductor photodiode. Phototransistor. Superlattice structures and channel diode. *
8. Semiconductor Sensors Vidicon, plumbicon. SPRITE detector. Charge-coupled devices.
Annotation
Physical principles of semiconductor structures and optoelectronic devices: P-N junction, Schottky contact, MIS structure, heterojunctions, photovoltaic effects (solar cells), light-emitting diodes and semiconductors lasers, photodetectors, charge-coupled devices.