Publikace
- Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations2021 | Matematicko-fyzikální fakulta
- V-pits formation in InGaN/GaN: influence of threading dislocations and indium content2022 | Matematicko-fyzikální fakulta
- DIFFUSION OF Mn INTERSTITIAL IONS IN GaMnAs2019 | Matematicko-fyzikální fakulta
- Strain relaxation of InGaN/GaN Strain relaxation of InGaN/GaN by formation of V-pits by formation of V-pits2019 | Matematicko-fyzikální fakulta
- X-ray Diffraction Analysis of Surface Si Nanostructures Used for Ge Nanoheteroepitaxy2019 | Matematicko-fyzikální fakulta
- Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate2012 | Matematicko-fyzikální fakulta
- Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers2011 | Matematicko-fyzikální fakulta
- Study of Mn interstitials in (Ga,Mn)As using HRXRD2011 | Matematicko-fyzikální fakulta
- X-ray diffraction analysis of surface Si Nanostructures used for Ge nanoheteroepitaxy2011 | Matematicko-fyzikální fakulta
- Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars2011 | Matematicko-fyzikální fakulta
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