Publikace
- Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures2014 | Matematicko-fyzikální fakulta
- Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11(2)over-bar2) GaN layers grown from the sidewall of an r-patterned sapphire substrate2013 | Matematicko-fyzikální fakulta
- Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers2011 | Matematicko-fyzikální fakulta
- Grazing-incidence x-ray diffraction from GaN epitaxial layers withthreading dislocations2011 | Matematicko-fyzikální fakulta
- Rtg difuzní rozptyl na dislokacích v epitaxních vrstvách GaN2010 | Matematicko-fyzikální fakulta
- Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system2013 | Matematicko-fyzikální fakulta
- High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure2013 | Matematicko-fyzikální fakulta
- The Poisson Ratio in CoFe2O4 Spinel Thin Films2012 | Matematicko-fyzikální fakulta
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