Method for determination of diffusion length of minority carriers in silicon wafers by measurement of the surface photovoltage.
Abstract
American Standard SEMI MF 391-07-08 dated 2008 is applicable to silicon wafers that are four times thicker than the minority carrier diffusion length. According to Standard ČSN 36 4639 samples of arbitrary thickness used in practice can be measured.
The method uses optical radiation of low intenzity and utilizes different wavelengths penetration depth into semiconductor.