Publication at Faculty of Mathematics and Physics |
2009
Abstract
Electronic structure of Si(110)-16x2 surface was studied by high reslution angle resolved phtoemission spectroscopy and scanning tunneling microscopy. Four semiconducting bands with flat dispersions at energies 0.2, 0.4, 0.75 and 1.0 eV were observed in the bulk band gap and more than six states were observed in projected bulk band at energies less than 5.2 eV.
Origins of the states are discussed based on the local densty of states obtained by STM. Further, a structural model of the reconstrucion is proposed.