Abstract
Hard-X-ray photoelectron spectroscopy (HXPES) is a relatively new method derived from the well-known X-ray photoelectron spectroscopy (XPS). The higher excitation energies of the X-rays are increasing the information depth of the method and open up the opportunities of bulk sensitive HXPES applications to various kind of materials.
The realization of HXPES has been limited to synchrotron radiation facilities. In this work, we report the development of a laboratory HXPES system with a practical throughput, which has been achieved by devising a combination of a compact focused monochromatic Cr Ka (5.4 keV) X-ray source, a wide acceptance objective lens, and a high energy hemispherical electron analyzer.
The performance of the designed HXPES system was demonstrated on Si-LSI-related samples, such as SiO2/Si(001) and Ir/HfO2/SiO2/Si(001). The applicability of the system to detect the depth information of layered materials more then 10 nm thicknesses was confirmed.