Publication at Faculty of Mathematics and Physics |
2010
Abstract
X-ray photoelectron diffraction has become a common method to determine element-specific local atomic surface structure. The use of hard X-rays makes this method bulk-sensitive and capable of studying the atomic structure of new materials such as multilayers and buried layers.
We present the first Cr K_alpha-excited angle-resolved photoelectron diffraction from Si(001) covered by a 0-7-nm thick SiO2 layer and demonstrate the information depth of this technique. The measured results are compared with a cluster model simulation.