Publication at Faculty of Mathematics and Physics |
2010
Abstract
In presented work, X-ray Photoelectron Spectroscopy (XPS) was used to study interaction of gallium deposited on different metal-oxide surfaces. CeOx/Si, γ-Al2O3, Al2O3/Al, Al foil and Si were used as substrates.
Ga was deposited in number of steps up to a thickness of several nanometers. Prepared samples were further studied under different temperature conditions.
Gallium oxidation state was determined by Auger parameter analysis. Interaction of gallium with highly oxidized substrates led to gallium oxidation.
The interaction of gallium with surface was strongly influenced by oxidation state of particular substrate. In addition, strong interaction between gallium and CeOx support occurred.