Publication at Faculty of Mathematics and Physics |
2010
Abstract
Experimental studies of noise characteristics of CdTe crystals prepared using the Bridgman method from Te-rich melt have been carried out. The noise measurements show that the dominant noise is 1/f^n noise with the parameter n in the range from 0.9 to 1.5 and often very close to 1.
The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. Analysis shows that the excess 1/f noise is caused by the low carrier concentration within the depleted region at the metal–semiconductor junction.