Publication at Faculty of Mathematics and Physics |
2009
Abstract
In this paper we present a growth of Ga(1-x)Mn(x)N layers by Metal-Organic Vapor Phase Epitaxy(MOVPE) and ion implantation of GaN layers with Mn. This material is a promising candidate for spintronic applications.
The layers were prepared on (0001) sapphire substrates. Optimum parameters of preparations by MOVPE method were investigated and the prepared samples were tested for magnetic properties.
The samples were characterized by Secondary Ion Mass Spectrometry(SIMS), Electron Microprobe and Particle Induce X-ray Emission (PIXE) methods, and by Raman spectroscopy. The magnetic parameters were investigated using the Superconducting Quantum Interference Device(SQUID)