Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

Abstract

High quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm(3), grown by a hydrothermal approach, have been implanted by 40 keV N+ ions to a fluence of 1 x 10(15) cm(-2) at room temperature. Their properties revealed by positron annihilation and Hall effect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 degrees C and 500 degrees C.

Keywords

• ZnO single crystals
• N-implantation
• Defects
• Positron annihilation
• Hall effect.