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IR transmittance of CdTe after high-temperature annealing

Publikace na Matematicko-fyzikální fakulta |
2011

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

Infrared transmittance and electrical properties of undoped and In-doped CdTe single crystals were investigated before and after post-growth annealing at high temperature followed by various cooling regimes. Typical free carrier absorption was found in the IR transmittance spectra at low energies.

Non-standard absorption behavior was observed in the range 0.8-1.5eV in samples,which were quenched in the air after annealing.