Publication at Faculty of Mathematics and Physics |
2011
Abstract
The aim of this work was to find an effective annealing treatment leading to a complete elimination of Te inclusions and simultaneously to conservation of the resistivity of CdTe:Cl crystals with varying chlorine doping level. This goal was reached by an application of two post-growth annealing steps.
The first annealing step performed under Cd overpressure led to a significant reduction of Te inclusions and re-annealing of the material in a Te atmosphere was necessary to restore the high material resistivity. The size of Te inclusions, resistivity, photoluminescence spectra and detection properties of CdTe:Cl crystals before and after the two-step thermal treatment are discussed.