Publikace na Matematicko-fyzikální fakulta |
2011
Abstrakt
Experimental methods(like photoluminescence, deep level transient spectroscopy, synchrotron x-ray diffraction topography and scanning electron microscopy) were used to investigate semiinsulating, gamma detector grade crystals CdMnTe doped with indium. Shallow traps, A-centers, deep levels were revealed.
Some specific features of dislocation-induced defects were discussed.