Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers

Abstrakt

Diffuse x-ray scattering from various types of stacking faults in basal (0001) planes in a-oriented wurtzite GaN epitaxial layers is described theoretically and the calculated intensity distributions are compared with experimental data. From the comparison, the densities of stacking faults in a series of a-GaN samples were determined.

The method makes it possible to discriminate the diffuse scattering from stacking faults from the influence of nonplanar defects like dislocations.

Klíčová slova

• Diffuse
• x-ray
• scattering
• stacking
• faults
• a-plane
• GaN
• epitaxiallayers