Publikace na Matematicko-fyzikální fakulta |
2011
Abstrakt
Diffuse x-ray scattering from various types of stacking faults in basal (0001) planes in a-oriented wurtzite GaN epitaxial layers is described theoretically and the calculated intensity distributions are compared with experimental data. From the comparison, the densities of stacking faults in a series of a-GaN samples were determined.
The method makes it possible to discriminate the diffuse scattering from stacking faults from the influence of nonplanar defects like dislocations.