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Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodic wires

Publikace na Matematicko-fyzikální fakulta |
2011

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The method now enables reconstruction of elastic strain distribution in layered nanowires or dots.

The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure.

We demonstrate the method to be effective for material specific reconstruction of strain distribution in highly integrated devices.