Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

Abstrakt

Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy.

Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects.

We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

Klíčová slova

• Demonstration
• molecular
• beam
• epitaxy
• semiconducting
• band structure
• for
• I-Mn-V
• compounds