Abstract
A method for the determination of the concentrationdepth profiles of Mn interstitialions in (Ga,Mn)As thin epitaxial layers using high-resolution x-ray diffraction (HRXRD) is presented. The structure factor is affected by the presence of antisite defects and Mn ions in nonequivalent lattice positions, their particular influence on the structure factor differs for various Miller indices hkl.
The diffraction curves were mea sured for sev eral diffraction maxima hkl and they were fitted by the theoretical curves. The depth pro files of the Mn interstitial density obtained for the sample in various an nealing states were compared to the numerical driftdiffusion simulations, from this comparison the diffusivity of the in terstitials in (Ga,Mn)As host lattice has been estimated.