Abstract
System of semiconductor and metal quantum dots in amorphous matrix is studied in this work. Kinetic Monte Carlo model of quantum dots growth in the crystalline matrix was modified for the case of the amorphous matrix.
Preliminary results of simulations of the Ge/SiO2 system are presented. They verified that quantum dots ordering in lateral and vertical directions is caused by surface morphology.
Quantum dots preferably nucleate in the minima of surface height i.e.in the minima of the chemical potential on the surface.