Abstract
The influence of deposition methods and type of metal contacts on the defects generated at the metal/semiconductor interface has been investigated. Photoluminesccence spectra at a low temperature demonstrated that the Au electroless deposition samples exhibit the lowest I-(D0,I-X)/IA-center ratio and have the best gamma response.
Rutherford backscattering spectrometry results show that the sputtering method creates the highest concentration of TeO2 layer compared with the evaporation and electroless deposition methods. The electroless Au has more inter-diffusion between the contact and the CZT material than either sputtering or evaporation methods.
The electroless Pt and Ru depositions, however, exhibit lower inter-diffusion. The contacts deposited by electroless and evaporation present more quasi-ohmic behaviour and better gamma response than those fabricated by sputtering.