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Etching behavior of GaAs, GaSb, InAs, and InSb in aqueous H2O2-HBr-ethylene glycol solutions

Publikace na Matematicko-fyzikální fakulta |
2012

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

The chemical interaction of GaAs, GaSb, InAs, and InSb single crystals with H2O2-HBr-ethylene glycol bromine-releasing etchants has been studied under reproducible hydrodynamic conditions. We have located boundaries between regions of polishing and nonpolishing solutions, assessed the surface condition of the crystals using microstructural analysis and surface profiling, and optimized the compositions of the polishing solutions and dynamic chemical polishing conditions for the materials studied.