Abstract
Hydrogen diffusivity in ZnO (0001) single crystal was investigated using electrical resistometry and nuclear reaction analysis (NRA). ZnO crystals were covered with a thin Pd over-layer and electrochemically charged with hydrogen.
The net concentration of hydrogen determined by NRA was found to be in a reasonable agreement with the value estimated from the transported charge using the Faraday's law. The hydrogen diffusion coefficient in ZnO was estimated from in-situ electrical resistivity measurements.
Moreover, NRA investigations revealed existence of a subsurface layer with very high concentration of hydrogen (up to 40 at.%). Typical surface modification observed on hydrogen loaded crystal by light microscope indicates hydrogen-induced plastic deformation realized by a slip in the c-direction.
Open-volume defects introduced by hydrogen-induced plastic deformation trap diffusing hydrogen and cause an enhancement of hydrogen concentration in the deformed subsurface layer.