Function of thin film nanocrystalline diamond-protein SGFET independent of grain size

Abstract

The NCD thin film of different grain size was used for construction of solution-gated field-effect transistor and different characteristics were measured. It was found that the function of SGFET is not influenced by grain boundaries and sp2 phase but only by H-termination of the surface.

Keywords

• Field-effect transistors
• nanocrystalline diamond
• fetal bovine serum
• osteoblastic cells