The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures

Abstract

We present a generalization of the Dodson-Tsao kinematic model of misfit dislocation for graded SixGe1-x/Si(001) layers. The layers were prepared under different growing conditions (temperature).

The misfit dislocation distribution has been determined by means of high-resolution x-ray scattering. Analysis of the reciprocal space maps was compared with the kinematic Dodson-Tsao model and the equilibrium Tersoff model.

Keywords

• misfit
• dislocation
• density
• profile
• graded
• SiGe/Si001
• layers
• prepared
• different
• temperatures