We present the results of pump-probe experiments on multilayer graphene samples performed in a wide spectral range, namely from the near infrared (photon energy 1.5 eV) to the terahertz (photon energy 8 meV) spectral range. In the near infrared, exciting carriers and probing at higher photon energies provides direct evidence for a hot carrier distribution.
Furthermore, spectroscopic signatures of the highly doped graphene layers at the interface to SiC are observed in the near-infrared range. In the mid-infrared range, the various relaxation mechanisms, in particular scattering via optical phonons and Auger-type processes, are identified by comparing the experimental results to microscopic modeling.
Changes from induced transmission to induced absorption are attributed to probing above or below the Fermi edge of the graphene layers. This effect occurs for certain photon energies in the near-infrared range, where it is related to highly doped graphene layers at the interface to SiC, and in the far-infrared range for the quasi-intrinsic graphene layers.
In addition to the relaxation dynamics, the saturation of pump-induced bleaching of graphene is studied. Here a quadratic dependence of the saturation fluence on the pump photon energy in the infrared spectral range is revealed.