The misfit dislocation density profile in graded SiGe/Si( 001) layers prepared at different temperatures (vol 25, 175802, 2013)

Abstrakt

The reference Rosenblad C, von Kanel H, Kummer M, ¨Dommann A, Muller E 2000 ¨ Appl. Phys.

Lett. 76 427 was omitted from the reference list and should have been cited in the first sentence of section 3, after ‘We have analyzed a series of SiGe/Si(001) graded layers prepared at ETH Zurich, Switzerland by an LEPECVD (low energy plasma enhanced chemical vapor deposition) method at different temperatures’.

Klíčová slova

• misfit
• dislocation
• density
• profile
• graded
• SiGe/Si
• 001
• layers
• prepared
• different
• temperatures
• vol
• 175802
• 2013