Characterization of CdTe and (CdZn)Te detectors with different metal contacts

Abstrakt

The influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material was studied with aim to find optimal conditions to improve the properties of metal-semiconductor contact.

Klíčová slova

• CdZnTe
• semiconductor gamma-radiation detector
• I-V curves
• contacts
• passivation