We report on the measurements of nonequilibrium carrier dynamics in monocrystalline diamond prepared by the chemical vapor deposition (CVD) technique. Nonlinearly excited laser-induced transient grating (LITG) and time-resolved photoluminescence (PL) were used for investigation of carrier diffusion and recombination.
Diffusion constant was observed to be strongly dependent on the sample temperature and carrier density (D=2.5-35cm(2)s(-1)) what was explained in terms of the density dependent carrier-carrier scattering. The new method based on the time-resolved PL was proposed for measuring the diffusion and recombination dynamics of excitons.
The measured exciton lifetime (FE)=700-800ns was temperature independent between 100 and 295K.