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Optical study of carrier diffusion and recombination in CVD diamond

Publikace na Matematicko-fyzikální fakulta |
2013

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

We report on the measurements of nonequilibrium carrier dynamics in monocrystalline diamond prepared by the chemical vapor deposition (CVD) technique. Nonlinearly excited laser-induced transient grating (LITG) and time-resolved photoluminescence (PL) were used for investigation of carrier diffusion and recombination.

Diffusion constant was observed to be strongly dependent on the sample temperature and carrier density (D=2.5-35cm(2)s(-1)) what was explained in terms of the density dependent carrier-carrier scattering. The new method based on the time-resolved PL was proposed for measuring the diffusion and recombination dynamics of excitons.

The measured exciton lifetime (FE)=700-800ns was temperature independent between 100 and 295K.