Publication at Faculty of Mathematics and Physics |
2014
Abstract
We investigated the Pockels electro-optic effect in semi-insulating detector-grade cadmium telluride doped with indium without and with a high optical flux. We employed the Pockels electro-optic effect setup with two perpendicular sources of light.
We observed that without illumination positive space charge is present in the sample due to band bending at the CdTe/Au interface. After illumination with above-bandgap red light the electric field became less distorted due to filling of the ionized donors with trapped electrons.
We found the energy levels of electron traps in detector-grade CdTe at approximately 0.7 eV, 0.85 eV and 1.1 eV below the conduction band.