Abstrakt
We present a study of the polarization phenomena in n-type cadmium zinc telluride material with gold contacts that showed upwards bending of the bands near the metal-semiconductor (M-S) interface. The dynamic of electric field distribution along the sample due to the accumulation of positive space charge below the cathode at the M-S interface was studied by means of the Pockels effect.
The analysis of the time, bias and temperature variation of the electric field values at the M-S interface has provided the parameters of the deep donor responsible for the polarization mechanisms in the n-type CdZnTe.