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Mobility of Single Sn Atoms Inside Si(111)-7x7 Half-unit Cells

Publikace na Matematicko-fyzikální fakulta |
2014

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

Low coverage phases of Sn on Si(111)-7x7 were investigated by scanning tunneling microscopy. At room temperature, a single Sn atom is highly mobile inside a half-unit cell of the surface reconstruction.

Its mobility was studied by observing fluctuations of the tunneling current, which allows detecting the movement of the adatom with sub-millisecond resolution. The movement pattern of the atom inside the half-unit cell appears to consist of fast hops between central positions and three corner positions.

The Sn atom was found to be much more mobile inside the faulted half-unit cell, where the hopping frequency is also significantly affected by the presence of the STM tip.

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