Abstrakt
Performance of CdZnTe-based detectors is highly related to surface preparation. Mechanical polishing, chemical etching and passivation are routinely employed for this purpose.
However, the relation between these processes and the detector performance in terms of underlying physical phenomena has not been fully explained. The dynamics and properties of CdZnTe surface oxide layers, created by passivation with KOH and NH4F/H2O2 solutions, were studied by optical ellipsometry and X-ray photoelectron spectroscopy (XPS).
Thicknesses and growth rates of the surface oxide layers differed for each of the passivation methods. Leakage currents which influence the final spectral resolution of the detector were measured simultaneously with ellipsometry.
Results of both optical and electrical investigation showed the same trends in the time evolution and correlated to each other. NH4F/H2O2 passivation showed to be a method which produces the most desirable properties of the surface oxide layer.