Photostimulated luminescence and defects creation processes in Ce3+-doped epitaxial films of multicomponent Lu3-xGdxGayAl5-yO12 garnets
Abstrakt
Luminescence characteristics of epitaxial films of Ce3+-doped multicomponent garnets of the type of Lu3-xGdxGayAl5-yO12, where x varies from 0.14 to 3 and y varies from 0 to 3.54, are investigated in the 4.2-400 K temperature range by the steady-state and time-resolved spectroscopy methods. Their dependence on the film composition is clarified.
The presence in the same film of different Ce3+-related luminescence centers is revealed, and a possible structure of these centers is discussed. The processes of the electron and hole centers creation under irradiation of the films in the Ce3+-related absorption bands are studied by thermally stimulated luminescence method.
The location of the excited 5d(1) level of Ce3+ with respect to the bottom of the conduction band and the origin and thermal stability parameters of electron traps in the epitaxial films and in the single crystals of the same composition are found to be different.