Abstract
Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe technique to investigate these fundamental spin-transport parameters in a model semiconductor system.
We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reaching more than ten microns at times as short as nanoseconds. We have achieved this unprecedented combination of long-range and high-speed electronic spin-transport by simultaneously suppressing mechanisms that limit the spin life-time and the mobility of carriers.
By exploring a series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex semiconductor heterostructures. We confirm our conclusions by complementing the optical experiments with dc and terahertz photo-conductivity measurements.