Abstrakt
A monolayer of graphene was prepared by thermal decomposition of ethylene gas on Pt(111). The graphene can be readily removed by dosing O-2 at pressures in 10(-8) mbar range and surface temperatures (T-s) near 1000 K.
Residual gas analysis during the oxygen treatment of graphene layer detected CO to be the only formed product. The oxidation process has been continuously imaged by Low-energy Electron Microscope (LEEM) operated in mirror-electron mode.
LEEM observations revealed that the oxidation of graphene on Pt(111) occurs simultaneously at the outer island perimeter and in the interior of the graphene island. Symmetric hexagonal pits were observed to form continuously within graphene sheets, the pits proceeded isotropically.
The etch rate was determined to be equal for both modes and independent of the surface environment with the exception of areas above Pt step edges. The pit growth rate at constant oxygen pressure was found to increase exponentially with respect to temperature over the investigated T-s range of 927-1014K, yielding an apparent activation energy of 479 kJ/mol. (C) 2015 Published by Elsevier B.V.