The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation
Abstrakt
Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD) and organic molecular evaporation (OME). ZnO: Sm thin film was grown by PLD (Nd: YAG, lambda = 266 nm, tau = 6 ns) from Sm2O3:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates.
ZnPc thin film was deposited on ZnO: Sm layer by OME. ZnO: Sm films of c-axis-oriented hexagonal wurtzite structure and alpha-form ZnPc were obtained.
Emission of intra-4f transition in Sm3+ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO: Sm/ZnPc were observed. Electrical properties were not affected by Sm3+ dopant as ZnO: Sm film exhibited high electrical resistivity similar to 5 x 10(4) Omega cm.