Abstrakt
Topological insulators represents new state of the matter, which promises various application especially in spintronics devices. Special physical properties reside in the occurrence of the spin polarized surface states exhibiting linear dispersed band intersect in the Dirac nodes similarly to the graphene.
Their presence has essencial influence on their properties, primary the surface conductivity and suppression of the back scatering. It this work is studied the magnetic ordering of the magnetically doped TI leading to the opening of the surface gap, by using ab-initio calculation and Monte-Carlo simulations.
As an initial system was chosen the Bi2Se3 compound. It is investigated the influence of various type of doping and intrinsic defect on the obtained ordering temperatures.