Abstract
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe (CZTS) radiation detectors by comparing experimental data with numerical simulations based on the simultaneous solution of drift-diffusion and Poisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier heights and the Fermi level position from I-V measurements.
We measured the time evolution of the electric field and the electrical current after the application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap-one recombination and one hole trap.
We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS is favorable for high electrical charge transport.
Published by AIP Publishing.