Charles Explorer logo
🇬🇧

Native point and layer defect in magnetically doped topological insulator multilayers

Publication at Faculty of Mathematics and Physics |
2019

Abstract

The effect of magnetic doping on surface states of topological insulators represents an interesting and highly debated problem, since magnetic field breaks the time-reversal symmetry guaranteeing surface band crossing. In reality several kinds of native defect could appear in these systems as well.

Their inclusion allows to obtain a more realistic behavior as compared to the ideal one. Their presence could influence the size of a bulk and surface gap or the presence of ungapped surface states.

The mutual interplay between defects is also important. In this work we focus on physical properties of magnetically doped well-know Bi2Se3 3D topological insulator [1] under the presence of native point and layer defects [2] treated by TB-LMTO+CPA within the surface Green's function approach.

We show the impact of the mentioned defects on its bulk and surface band structure, especially on its gap size and magnetism related properties in the case of magnetic doping. The relations between occuring defects are discussed as well.

Finally we try to compare exchange interactions leading to magnetic ordering as a function of composition. [1] K. Carva et al., Phys.Rev.B 93 (2016), 214409 [2] D.

Kriegner et al., J.Appl.Cryst. 50 (2017), 369-377