Abstract
Our contribution is focused on simulation of early stages of thin films growth using continuous and pulsed plasma deposition. The results were described and compared using image analysis methods, mainly the nearest neighbours distribution (DNN) and Quadrat Counts methods.
In the atomistic modelling of metal film growth the combination of two techniques was used: the nucleation process and the initial island growth were simulated by the molecular dynamics approach, while the simulation of further growth stages was performed by the kinetic Monte Carlo method. Information about some processes (e.g. coalescence rate) for the stochastic description of film growth is taken either from the literature (e.g. [1]-[5]) or, the most important parameters, are determined from our molecular dynamics simulation and used as input data for the subsequent Monte Carlo model [2,3].
We used model of low temperature plasma interacting with a substrate as a source of impinging particles again using a combination of Monte Carlo and molecular dynamics methods.