We are using computational approaches to study island growth of metal thin films during continuous and pulsed deposition. The processes taking place during early stages of the growth are simulated by a combination of two approaches - information about sizes and shapes of islands containing less than ten atoms obtained from the molecular dynamics model are introduced as input data to a kinetic Monte Carlo model with atomistic diffusion and liquid islands in shapes of hemispheres.
The Quadrat Counts method was utilized to describe the spatial distribution of objects. The distribution of islands radii was calculated from results obtained from the Monte Carlo model.