Plasma Diagnostics in Reactive High-Power Impulse Magnetron Sputtering System Working in Ar + H2S Gas Mixture
Abstract
A reactive high-power impulse magnetron sputtering system (HiPIMS) working in Ar + H2S gas mixture was investigated as a source for the deposition of iron sulfide thin films. As a sputtering material, a pure Fe target was used.
Plasma parameters in this system were investigated by a time-resolved Langmuir probe, radio-frequency (RF) ion flux probe, quartz crystal monitor modified for measurement of the ionized fraction of depositing particles, and by optical emission spectroscopy. A wide range of mass flow rates of reactive gas H2S was used for the investigation of the deposition process.
It was found that the deposition rate of iron sulfide thin films is not influenced by the flow rate of H2S reactive gas fed into the magnetron discharge although the target is covered by iron sulfide compound. The ionized fraction of depositing particles decreases from r approximate to 40% to r approximate to 20% as the flow rate of H2S, QH(2)S, changes from 0 to 19 sccm at the gas pressure around p approximate to 1 Pa in the reactor chamber.
The electron concentration n(e) measured by the Langmuir probe at the position of the substrate decreases over this change of Q(H2S) from 10(18) down to 10(17) m(-3)