HfO2-Al2O3 Dielectric Layer for a Performing Metal-Ferroelectric-Insulator-Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 Thin Film
Abstract
In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3(BCZT)/Si metal-ferroelectric-semiconductor (MFS) structures are investigated. Moreover, the effect of introducing a thin dielectric HfO2-Al2O3 (HAO) layer with different thicknesses between the BCZT layer and the Si substrate on the ferroelectric characteristics in the metal-ferroelectric-insulator-semiconductor (MFIS) configuration is evaluated.
It is evidenced that the insertion of the HAO layer with a thickness of 8 nm improves the memory window of the capacitance-voltage (C-V) curves by 106% compared to the value obtained in the MFS structure and reduces the leakage currents. Furthermore, the Au/BCZT/HAO (8 nm)/Si structure shows a remarkable remnant polarization (P-r) of 7.8 mu C/cm(2), with a coercive voltage of 1.9 V.
The obtained value for P-r corresponds to a six times enhancement when compared to the value obtained in the Au/BCZT/Si structure. In addition, the fatigue studies reveal that the P-r obtained in the Au/BCZT/HAO/Si structure slightly decreases (3%) with continuous cycling, up to 10(9) cycles.
The present work evidences that Au/BCZT/HAO/Si structures are promising for nonvolatile memory applications.