Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
Abstract
The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and approximate to 11.7 eV below the VB maximum.
At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the I-1 multiplet which is almost exclusively responsible for this resonance, while H-3 and F-3 states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb2O3.