Abstrakt
We measured spectral-resolved photocurrent in a wide range of photon energies from 0.68eV to 4.10eV, current-voltage characteristics, and mid to near-infrared transmittance spectra on a semi-insulating 4H-SiC wafer at room temperature. We identified four deep levels, their energies, and localization radii.
The model considers the defects' wavefunction as a linear combination of s- and p-states. Such a linear combination leads to the mixture of dipole allowed and forbidden transitions.
The forbidden transitions contribute to a broad photocurrent spectrum, and the allowed transitions appear as sharp photocurrent peaks. The width of photocurrent peaks is related to the localization radius of deep levels. (C) 2021 Elsevier B.V.
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