Fabrication and investigation photosensitive of Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction
Abstrakt
This paper reports the results of an investigation of the electrical and photoelectrical properties of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction formed by the deposition of thin films PEDOT:PSS on CdZnTe substrates. The Cd1-xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity rho approximate to 10(2) Ohm.cm.
The values of the series resistance Rs and shunt resistance Rsh of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction were determined from the dependence of their differential resistance Rdif. The temperature dependencies of the height of the potential barrier of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction was determined from the I-V characteristics.
The dominating current transport mechanisms through the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunctions were determined.