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A self-powered UV-vis-NIR graphite/CdZnTe Schottky junction photodiode

Publikace na Matematicko-fyzikální fakulta |
2023

Tento text není v aktuálním jazyce dostupný. Zobrazuje se verze "en".Abstrakt

We proposed a self-powered UV-vis-NIR Schottky junction photodiode based on a unique combination of radiation-hard functional materials: thin-film semi-metal Graphite and CdZnTe single-crystal compound semiconductor. The graphite/CdZnTe Schottky junction photodiodes exhibit a maximum responsivity of 0.25 A W-1 and detectivity of 6.5 x 10(11) Jones, close to the best heterojunction photodiodes based on CdZnTe solid solution.

The devices are also characterized by short rise/fall times (1.2/7.2 mu s) and a wide linear dynamic range (77 dB). The proposed photodiodes are promising for applications in space and terrestrial areas with high levels of ionizing radiation.